A three-layer 3D silicon system using through-Si vertical opticalinterconnections and Si CMOS hybrid building blocks

摘要

We present for the first time a three-dimensional (3D) Si CMOSninterconnection system consisting of three layers of opticallyninterconnected hybrid integrated Si CMOS transceivers. The transceiversnwere fabricated using 0.8-Μm digital Si CMOS foundry circuits andnwere integrated with long wavelength InP-based emitters and detectorsnfor through-Si vertical optical interconnections. The opticalntransmitter operated with a digital input and optical output withnoperation speeds up to 155 Mb/s. The optical receiver operated with annexternal optical input and a digital output up to 155 Mb/s. Thentransceivers were stacked to form 3D through-Si vertical opticalninterconnections and a fabricated three layer stack demonstrated opticalninterconnections between the three layers with operational speed of 1nMb/s and bit-error rate of 10-9