机译:量子阱数对2.3-μμmGaSb基量子阱激光二极管性能影响的自洽分析
Nat. Nanotechnol. Res. Centre (NNRC), King Abdul Aziz City for Sci. & Technol. (KACST), Riyadh;
III-V semiconductors; SCF calculations; carrier density; gallium compounds; laser beams; laser cavity resonators; optical losses; optical materials; quantum well lasers; GaSb; carrier transport; internal loss; laser cavity length; optical power reduction; p-type layer; quantum well laser diode; quantum well number effect; self-consistent analysis; threshold current density; wavelength 2.3 mum; Quantum well (QW) lasers; semiconductor device modeling; semiconductor lasers;
机译:填充因子提高的2.3μm高功率I型量子阱GaInAsSb / AlGaAsSb / GaSb激光二极管阵列
机译:基于GaSb的2.X-μm量子阱二极管激光器的光束特性改善且不降低激光参数的理论分析
机译:基于GaSb的2.X-μm量子阱二极管激光器的光束特性改善且不降低激光参数的理论分析
机译:低阈值,低光束发散,基于GaSb的量子阱二极管激光器,发射波长范围为1.9至2.4 / splμ/ m
机译:基于GaSb的I型量子阱可调谐二极管激光器,光谱范围超过3微米
机译:InGaN / GaN多量子阱发光二极管中的光电性能变化:电位波动的影响
机译:级联I型量子阱Gasb基二极管激光器