2.3-(mu)m High-Power Type I Quantum-Well GaInAsSb/AlGaAsSb/GaSb Laser Diode Arrays with Increased Fill Factor

摘要

Arrays of 100-(mu)m-wide GaInAsSb/AlGaAsSb laser diode emitters with a fill factor of 30percent have been fabricated. Suppression of lateral lasing was achieved by the incorporation of grooves between the emitters. A quasi-continuous wave (CW) (30 (mu)s, 300 Hz) output power of 16.7 W from a 4-mm-long laser bar has been demonstrated.