Monolithically Integrated III-Sb-Based Laser Diodes Grown on Miscut Si Substrates

摘要

We report the formation and growth characteristics of an interfacial misfit (IMF) array between AlSb and Si and its application to III-Sb-based quantum-well broad-area edge-emitting laser diodes monolithically grown on an Si (001) substrate. A 13% lattice mismatch between AlSb and Si is accommodated by using the IMF array. A use of 5deg miscut Si substrates enables simultaneous IMF formation and suppression of an antiphase domain, resulting in a drastic suppression of dislocation density over the III-Sb epilayer and realization of electrically injected laser diodes operating at 77 K. The current-voltage characteristics indicate a diode turn-on of 0.7 V, which is consistent with a theoretical built-in potential of the laser diode. This device is characterized by a 9.1-Omega forward resistance and a leakage current density of 0.7 A/cm2 at -5 V and 46.9 A/cm2 at -15 V.