Monolithically integrated III-Sb CW super-luminal light emitting diodes on non-miscut Si (100) substrates

摘要

Reported is super-luminescent emission under room-temperature, continuous-wave conditions from GaSb quantum-well-based light emitting diodes (LED), monolithically integrated on Si (100) substrates. The LEDs are realised with substrate growth temperature under 500degC for the entire process and the Si (001) substrate is non-miscut. The lattice mismatch at the AlSb/Si interface is accommodated by interfacial misfit dislocation arrays (IMF) resulting in low defect-density III-Sb material without thick metamorphic buffers. The devices are grown in etched trenches on the Si substrate to reduce anti-phase domains in the III-Sb. The n-Si substrate is contacted directly and thus current flows through the III-Sb/Si IMF interface. The diodes have extremely low leakage current density (Jleakage<0.2 A/cm2) in the reverse bias (-10 V) and show very good diode characteristics but exhibit a slightly elevated forward resistance (R~ 27 Omega), likely to be because of the IMF. The super-luminal spectra peaks at 2.14 mum with maximum output power ~0.125 mW