Monolithic integrated collector-base diode - has emitter zone without galvanic connection to base and collector zones in substrate with epitaxial layer of opposite conductivity

摘要

On a semiconductor substrate (1) an epitaxial layer (2) of opposite conductivity is grown. A part of the epitaxial layer, forming the collector zone (3) is separated by insulation diffusion. A base zone (11) is diffused into the collector zone and has the substrate conductivity. An emitter zone (12) of the collector zone conductivity is diffused into the base zone. This emitter zone has no galvanic connection with the base and collector zones. A highly doped collector terminal zone (13) of the collector conductivity is diffused into the collector zone, and surrounds annularly the base zone. Under the latter is provided a highly doped conductive layer region (16) at the boundary between the substrate and collector zone, having the collector conductivity. The collector terminal zone reaches down to the conductive layer region.