High temperature (74 degrees C) CW operation of 634 nm InGaAlP laser diodes utilizing a multiple quantum barrier

摘要

A modified multiple-quantum-barrier structure has been applied to a 630-nm-band laser diode. The result is a laser exhibiting a maximum operating temperature of 74 degrees C and a threshold current of 49 mA. These characteristics correspond to a 22 degrees C increase in the operating temperature and over a 50% decrease in the threshold current, in comparison to an identical laser without a multiple quantum barrier. This is the first time, to the authors' knowledge, that a significant decrease in the threshold current of a laser has been directly attributed to the influence of a multiple quantum barrier.