Argon Content of SiO2 Films Deposited by RF Sputtering in Argon

摘要

When SiO2 is deposited by sputtering in an argon rf glow discharge, the films so produced contain considerable amounts of trapped argon, as determined by x-ray fluorescence analysis. This argon content was measured as a function of various sputtering parameters: argon pressure, rf power, electrode spacing, substrate temperature, and magnetic field, the latter two being most influential. A simple theoretical model for the capture and release of argon is presented which explains an observed linear decrease of the argon concentration in SiO2 with increasing temperature. Incorporation of argon into the sputtered SiO2 film does not seem to impair the film's ability to act as a good passivating and insulating layer.