LOW ARGON-CONTAINING SIO2 DEPOSITED FILM AND PRODUCTION THEREOF

摘要

PURPOSE:To obtain a low argon-containing SiO2 deposited film suitable as a magnetic gap material, generating a small amount of bubbles even by heating at an arbitrary temperature in an Ar content of = a given value by sputtering SiO2 in an Ar gas under specific pressure. CONSTITUTION:SiO2 is sputtered as a target in an Ar gas under pressure =0.2Pa to give a low argon-containing SiO2 deposited film having =5atomic% Ar content. A low argon-containing SiO2 deposited film having =5atomic% Ar content can be produced by heat-treating Ar-containing SiO2 deposited film. Since the prepared Ar-containing SiO2 deposited film has low Ar content, even if low-melting glass, etc., may be melted on the SiO2 deposited film, a released amount of Ar gas of the SiO2 deposited film is small and no bubble is formed in the glass. Consequently, the low argon-containing SiO2 deposited film is suitable as a SiO2 layer for constituting a gap layer of a complex magnetic head requiring bonding to glass.