Millimetre-wave planar oscillator on semi-insulating GaAs substrate

摘要

Design and fabrication of V-band stripline oscillators for pulsed and CW IMPATT diodes on semi-insulating GaAs substrates are described. Maximum output power of 125 mW at 53 GHz and 80 mW at 70 GHz, with an efficiency up to 3%, could be realised for Si and GaAs CW devices, respectively.