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Integration of an injection laser with a Gunn oscillator onuda semi-insulating GaAs substrates

机译：将注入式激光器与耿氏振荡器集成在一起半绝缘GaAs衬底

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摘要

The integration of an injection semiconductor laser with an active electronic device (Gunn oscillator) in a single epitaxial crystal device is demonstrated.

机译：说明将注入型半导体激光器与有源电子器件（Gunn振荡器）集成在单个外延晶体器件中。

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Lee C. P.; Margalit S.; Ury I.; Yariv A.;
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年度 1978
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正文语种 {"code":"en","name":"English","id":9}
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专利

1. Millimetre-wave planar oscillator on semi-insulating GaAs substrate [J] . Freyer J., Guttich U. IEE Proceedings. Part G, Electronic Circuits and Systems . 1989,第2期

机译：半绝缘GaAs衬底上的毫米波平面振荡器
2. Laser Operation and Spectroscopy of Epitaxial GaAs Gunn Oscillator Wafers [J] . Journal of Applied Physics . 1969,第12期

机译：外延GaAs耿氏振荡器晶片的激光操作和光谱学
3. Continuous Wave Operation of Thin Film Lateral Current Injection Lasers Grown on Semi-Insulating InP Substrate [J] . Tadashi Okumura, Hitomi Ito, Daisuke Kondo, Japanese journal of applied physics . 2010,第4issue1期

机译：半绝缘InP衬底上生长的薄膜横向电流注入激光器的连续波操作
4. AlGaAs/GaAs ridge waveguide lasers on semi-insulating substrate with airbridged contacts with 21 GHz modulation response frequency [C] . Haozhe Dong, Gopinath, A. . 1994

机译：半绝缘衬底上具有气桥触点的AlGaAs / GaAs脊形波导激光器，调制响应频率为21 GHz
5. THE EFFECT OF A HIGH-ENERGY ELECTRON INJECTION CATHODE ON THE PERFORMANCE OF THE GUNN OSCILLATOR. [D] . GREENWALD, ZIPORA. 1986

机译：高能电子注入阴极对枪式振荡器性能的影响。
6. Dense lying self-organized GaAsSb quantum dots on GaAs for efficient lasers [O] . Thomas H Loeber, Dirk Hoffmann, Henning Fouckhardt 2015

机译：GaAs上密集的自组织GaAsSb量子点，用于高效激光器
7. Double-heterostructure GaAs-GaAIAs injection lasers on semi-insulating substrates using carrier crowding [O] . Lee C. P., Margalit S., Yariv A. 1977

机译：使用载流子拥挤在半绝缘衬底上的双异质结构GaAs-GaAIAs注入激光器

Integration of an injection laser with a Gunn oscillator onuda semi-insulating GaAs substrates

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