SEMI-INSULATING GaAs SUBSTRATE AND METHOD FOR PRODUCING GaAs SUBSTRATE

摘要

A semi-insulating GaAs substrate exhibiting a principal surface orientation which is the (100) plane and having a disc shape which exhibits a diameter of at least 150mm, wherein the difference between measured values of dislocation density measured at a first measurement point, a second measurement point and a third measurement point is within 2,000cm^-2, when the first measurement point is the center of the principal surface, the second measurement point is the center of a first line segment extending from the first measurement point in the [010] direction to the outer-circumference of the semi-insulating GaAs substrate, and the third measurement point is a point located 10mm to the inside from the outer-circumference along the first line segment.