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An Optically Powered CMOS Receiver System for Intravascular Magnetic Resonance Applications

机译:用于血管内磁共振应用的光功率CMOS接收器系统

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This paper presents a low-power optically powered receiver system designed in 0.18 $mu {rm m}$ triple well UMC complementary metal–oxide–semiconductor (CMOS) technology. Optical transmission is used for both power delivery and signal transmission. The power of the whole system can be supplied in two different configurations, namely continuous and intermittent mode configurations. In the continuous mode configuration, the optical power of a 650-nm laser source is received and delivered to the electronic circuits by a set of on-chip CMOS photodiodes. In the intermittent mode configuration, a low voltage DC-DC converter is used to boost a single on-chip CMOS photodiode voltage of 0.65 V up to 1.8 V. Additionally, in this configuration, optical switching is used for charging and discharging of a storage capacitor to obtain currents in milliampere range for the proper operation. The front-end part of the receiver consists of a fully differential low noise amplifier (LNA), a fully differential gain stage, a single output double balanced Gilbert-cell mixer, and a laser driver. The front-end part can operate properly by one on-chip photodiode voltage of 0.65 V . System performance is demonstrated for a sample 1.5 T magnetic resonance imaging (MRI) application. Experiments show that LNA of the receiver has a low input referred noise voltage density of 4 ${rm nV}/sqrt {rm Hz}$ at the supply voltage of 0.65 V . The receiver transmits the signal via a fiber-coupled infrared (IR) laser diode ($lambda = 1310$ nm). The results show that the system can continuously process a minimum detectable signal (MDS) of $-70$ dBm at an incident optical power of 20 mW while the total power consumption of the r- ceiver and the IR diode is 700 $mu {rm W}$ . In the intermittent mode configuration, the system gain is measured to be 6 dB greater, and the average power consumption is measured as 214 $mu {rm W}$ when the incident laser is modulated with a rectangular pulse wave of 40 ms period with 95% duty cycle.
机译:本文介绍了一种低功耗光接收器系统,该系统采用0.18μm三重UMC互补金属-氧化物-半导体(CMOS)技术设计。光传输用于功率传输和信号传输。整个系统的电源可以两种不同的配置提供,即连续和间歇模式配置。在连续模式配置中,650 nm激光源的光功率通过一组片上CMOS光电二极管接收并传递到电子电路。在间歇模式配置中,低压DC-DC转换器用于将0.65 V的单个片上CMOS光电二极管电压升压至1.8V。此外,在此配置中,光开关用于存储的充电和放电电容器以获取毫安范围内的电流以正常工作。接收器的前端部分包括一个全差分低噪声放大器(LNA),一个全差分增益级,一个单输出双平衡吉尔伯特单元混频器和一个激光驱动器。前端部分可以通过一个0.65 V的片上光电二极管电压正常工作。在样本1.5 T磁共振成像(MRI)应用中证明了系统性能。实验表明,在电源电压为0.65 V时,接收机的LNA的输入参考噪声电压密度低至4 $ {rm nV} / sqrt {rm Hz} $。接收器通过光纤耦合红外(IR)激光二极管(λ= 1310 nm)发射信号。结果表明,该系统可以在入射光功率为20 mW的情况下连续处理$ -70 $ dBm的最小可检测信号(MDS),而接收器和IR二极管的总功耗为700 $ mu {rm W} $。在间歇模式配置中,当入射激光由40 ms周期的矩形脉冲波以95调制时,系统增益被测量为大6 dB,平均功耗被测量为214 $ mu {rm W} $。 % 占空比。

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