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A micropower CMOS, direct-conversion, VLF receiver chip formagnetic-field wireless applications

机译:用于磁场无线应用的微功耗CMOS直接转换VLF接收器芯片

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A micropower CMOS, direct-conversion very low frequency (VLF)nreceiver is described for receiving low-level magnetic fields fromnresonant sensors. The single-chip, phase locked loop (PLL)-synthesizednreceiver covers a frequency range of 10-82 kHz and provides both analognand 9-b digital baseband I and Q outputs. Digital I and Q outputs arenaccumulated in a companion digital chip which provides baseband signalnprocessing. Emphasis is plated on the receiver micropower RFnpreamplifier which uses a lateral bipolar input device because of thensignificant increase in flicker noise illustrated for PMOS devices innweak inversion. Lateral bipolar transistors are also utilized in thenmixer and IF stages for low flicker noise and low dc offsets. Specialnattention is given to isolating the internal local oscillator signalsnfrom the low-level RF input (0.3 ΜV noise floor in 300 Hz BW), andnlocal oscillator feedthrough is indiscernible in the RF preamplifiernoutput noise spectrum. The 100% duty-cycle receiver, intended fornminiature, battery-operated wireless applications, operatesnapproximately four months at 80 ΜA from a 6-V, 220-mA-hrnbattery
机译:描述了一种微功率CMOS,直接转换甚低频(VLF)n接收器,用于接收来自谐振传感器的低电平磁场。单芯片,锁相环(PLL)合成的接收器覆盖10-82 kHz的频率范围,并提供模拟和9-b数字基带I和Q输出。数字I和Q输出累积在提供基带信号处理功能的配套数字芯片中。重点放在使用横向双极型输入设备的接收器微功率RFn前置放大器上,因为对于无极性反转的PMOS器件,闪烁噪声的显着增加。横向双极晶体管还用于混频器和中频级,以降低闪烁噪声和降低直流失调。需要特别注意的是将内部本地振荡器信号n与低电平RF输入(300 Hz BW中的0.3 MV噪声本底)隔离开来,并且本地振荡器馈通在RF前置放大器n输出噪声频谱中是无法区分的。 100%占空比接收器适用于小型的电池供电的无线应用,使用6V,220mA电池时,以80MA的电压运行大约四个月。

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