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A micropower CMOS, direct-conversion, VLF receiver chip for magnetic-field wireless applications

机译:用于磁场无线应用的微功耗CMOS直接转换VLF接收器芯片

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A micropower CMOS, direct-conversion very low frequency (VLF) receiver is described for receiving low-level magnetic fields from resonant sensors. The single-chip, phase locked loop (PLL)-synthesized receiver covers a frequency range of 10-82 kHz and provides both analog and 9-b digital baseband I and Q outputs. Digital I and Q outputs are accumulated in a companion digital chip which provides baseband signal processing. Emphasis is plated on the receiver micropower RF preamplifier which uses a lateral bipolar input device because of the significant increase in flicker noise illustrated for PMOS devices in weak inversion. Lateral bipolar transistors are also utilized in the mixer and IF stages for low flicker noise and low dc offsets. Special attention is given to isolating the internal local oscillator signals from the low-level RF input (0.3 /spl mu/V noise floor in 300 Hz BW), and local oscillator feedthrough is indiscernible in the RF preamplifier output noise spectrum. The 100% duty-cycle receiver, intended for miniature, battery-operated wireless applications, operates approximately four months at 80 /spl mu/A from a 6-V, 220-mA-hr battery.
机译:描述了一种微功率CMOS,直接转换甚低频(VLF)接收器,用于接收来自谐振传感器的低电平磁场。单芯片,锁相环(PLL)合成的接收器覆盖10-82 kHz的频率范围,并提供模拟和9b数字基带I和Q输出。数字I和Q输出积累在提供基带信号处理功能的配套数字芯片中。重点放在使用横向双极型输入设备的接收器微功率RF前置放大器上,这是因为在弱反转中PMOS器件的闪烁噪声显着增加。横向双极型晶体管也用于混频器和中频级,以降低闪烁噪声和降低直流失调。要特别注意将内部本地振荡器信号与低电平RF输入(300 Hz BW中的0.3 / spl mu / V本底噪声)隔离开来,并且本地振荡器馈通在RF前置放大器输出噪声频谱中是无法分辨的。该100%占空比接收器旨在用于微型电池供电的无线应用,使用6 V,220 mA-hr电池以80 / spl mu / A的速度运行大约四个月。

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