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机译:大功率InGaP / GaAs异质结双极晶体管的微波操作
Wright Lab., Wright Patterson AFB, OH, USA;
III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; power transistors; solid-state microwave devices; 2.82 W; 3 GHz; 55.2 percent; 69.1 percent; CW output; InGaP-GaAs; collector efficiency; high power; multifinger selfaligned HBT; power added efficiency;
机译:用于微波功率应用的自对准InGaP / GaAs异质结双极晶体管
机译:GaAs / AlGaAs微波异质结双极晶体管的超高功率密度CW操作
机译:InGaP / GaAs / GaAsBi与InGaP / GaAs异质结双极晶体管的比较研究
机译:自对准InGaP / GaAs异质结双极晶体管的高微波功率性能
机译:高增益Ingap / GaAs异质结双极晶体管的低压金属化学气相沉积
机译:用于高效光伏转换的三端异质结双极晶体管太阳能电池
机译:InGap / Gaassb / Gaas双异质结双极晶体管中的电流传输机制
机译:InGap / InGaasN / Gaas NpN双异质结双极晶体管