InP-based mixed device (HEMT/HBT) technology on planar substrate for high performance mixed-signal and optoelectronic circuits

摘要

The authors report the first successful demonstration of an integrated circuit process on planar InP substrates that incorporates a stacked single layer MBE growth of HEMTs and HBTs. In this process, the HBT layers are patterned and selectively wet etched to expose the HEMT layers after the MBE growth is completed. The authors report functional HEMTs and HBTs on the same wafer, with pertinent DC and microwave measurements.