Ultra-high-speed InP-based Heterostructure Device Technology: InP-based HFETs and HBTs

摘要

This paper presents state-of-the-art ultra-high-speed InP-based heterostructure de vice technologies. InP-based HFET (Heterostructure Field-Effect Transistors) and HBT (Heterojunction Bipolar Transistors) device technologies are discussed with application to integrated circuits and optoelectronic integrated circuits.