Performance comparison of strained InGaNAs/GaAs and InGaAs/GaAs QW laser diodes grown by MOVPE

摘要

A performance comparison of InGaAs/GaAs and InGaNAs/GaAs strained quantum well (QW) laser structures grown by MOVPE is presented. Infinite threshold current densities of 0.095 and 1.22 kA/cm/sup 2/, with slope efficiencies of 0.25 and 0.15 W/A at emission wavelengths of 1.18 and 1.22 /spl mu/m, were obtained, respectively. A characteristic temperature (T/sub 0/) of 80 K was determined for as-cleaved InGaAs QW lasers, while a T/sub 0/ value as high as 117 K was obtained for InGaNAs QW lasers in the 20-80/spl deg/C temperature range.