Microwave noise performances of AlGaN/GaN HEMTs on semi-insulating 6H-SiC substrates

摘要

High-performance, low-noise AlGaN/GaN high electron mobility transistors (HEMTs) with 0.25μm gate-length have been fabricated on semi-insulating 6H-SiC substrates. The devices exhibited a unity current gain cutoff frequency (f_T) of 52.3 GHz, and maximum frequency of oscillation (f_(MAX)) of 112 GHz. At 10 GHz, a minimum noise figure (NF_(min)) of 0.75 dB and an associated gain (G_a) of 10.84 dB was obtained when biased at V_(DS) = 10 V and I_(DS) = 40.6mA/mm. The corresponding values were 1.15 and 7.49dB at 18 GHz. These results are the first reported microwave noise characteristics obtained from 0.25μm gate-length GaN HEMTs on 6H-SiC substrates. The use of 6H-SiC substrates provides an alternative solution to the full commercialisation of GaN-based technologies for low-noise and high-power electronics.