Low-threshold current density InAs quantum dash lasers on InP (100) grown by molecular beam epitaxy

摘要

Low-threshold current density InAs quantum dash lasers are demonstrated by reducing the energy inhomogeneous broadening through an optimised double-cap technique. A threshold current density for an infinite cavity length of 225 A/cm2 (ȣC;45 A/cm2 per stack) is obtained from a five-stack laser structure. The characteristic temperature above room temperature is 52K, and this relatively low value results from the carrier leakage from the dash into the barrier (waveguide) region.