Low-threshold Current Density Inas Quantum Dash Lasers On Inp (100) Grown By Molecular Beam Epitaxy

摘要

Low-threshold current density InAs quantum dash lasers are demonstrated by reducing the energy inhomogeneous broadening through an optimised double-cap technique. A threshold current density for an infinite cavity length of 225 A/cm~2 (～45 A/cm~2 per stack) is obtained from a five-stack laser structure. The characteristic temperature above room temperature is 52K, and this relatively low value results from the carrier leakage from the dash into the barrier (waveguide) region.