Surface-emitting GaAs light-emitting diode/laser diode with modified coaxial transverse junction (CTJ) structure

摘要

A novel surface-emitting light-emitting diode (LED)/laser diode (LD) with a coaxial transverse junction (CTJ) structure is demonstrated by modified structures of the well and hole types with improved thermal properties. A narrow emission pattern for the LED was realised due to the CTJ structure and preliminary results for laser operation were also obtained at low temperatures.