Structure optimisation of a possible 1.5-mu m GaAs-based vertical-cavity surface-emitting laser diode with the GaInNAsSb/GaNAs quantum-well active region

摘要

Structure optimisation of the GaAs-based GaInNAsSb/GaNAs quantum-well (QW) vertical-cavity surface-emitting diode lasers (VCSELs) has been carried out using the comprehensive three-dimensional self-consistent physical model of their room-temperature (RT) continuous-wave (CW) threshold operation. The model has been applied to investigate a possibility to use these devices as carrier-wave lasing sources in the third-generation optical-fibre communication. In this simulation, all physical (optical, electrical, thermal and gain) phenomena crucial for a laser operation including all important interactions between them are taken into consideration. As expected, the 1.5 lambda-cavity VCSEL has been found to demonstrate the lowest RT CW threshold. However, for many VCSEL applications, the analogous VCSEL equipped with a longer 3 lambda-cavity should be recommended because it exhibits only slightly higher threshold but manifest much better mode selectivity-the desired single-fundamental-mode operation has been preserved in these devices up to at least 380 K. The Auger recombination has been found to be decidedly the main reason of the threshold current increase at higher temperatures. A proper initial red detuning of the resonator wavelength with respect to the gain spectrum may drastically decrease CW lasing thresholds, especially at higher temperatures.