Quantum dot active regions for extended-wavelength (1.0 um to 1.3 um) GaAs-based heterostructure lasers and vertical-cavity surface-emitting lasers

摘要

In this paper we discuss crystal growth, spontaneous emission characteristics and low threshold performance of 1.3 $mu@m InGaAs/GaAs quantum dot heterostructure lasers grown using sub-monolayer depositions of In, Ga, and As. Oxide-confinement is effective in obtaining a low threshold current of 1.2 mA and threshold current density of 19 A/cm$+2$/ under continuous-wave room-temperature operation. At 4 K a remarkably low threshold current density of 6 A/cm$+2$/ is obtained. We also discuss ground state lasing at $lambda $EQ 1.07 $mu@m of a vertical cavity surface emitting laser in which a stacked and high dot density active region has been incorporated. The high QD density active region is achieved using alternating monolayers of InAs and GaAs. Lasing threshold conditions and gain parameters for a ground state quantum dot vertical cavity laser are also analyzed.