Novel two-step SDB technology for high-performance thin-film SOI/MOSFET applications

摘要

A novel two-step oxided silicon wafer direct bonding process (TSDB) for fabricating high-quality SOI substrates is presented, which has no contamination, no complex thinning process and no subsurface damage. The fracture strength of the SOI/TSDB material is 180 kg/cm/sup 2/. SOI/TSDB NMOS and PMOS devices (0.8-3 mu m) have shown that the typical values of electron and hole surface channel mobility are 680 and 320 cm/sup 2//Vs, respectively. A high device transconductance and high on-off current ratio have also been obtained.