A 0.5-μm-rule thin-film SOI power MOSFET for radio-frequency applications

摘要

A state-of-the-art 0.5-μm-rule thin-film SOI power MOSFET was fabricated to evaluate its radio frequency performance. The fabricated device with channel length was 0.5μm and drain offset length of 0.4 μm showed excellent performance. Its breakdown voltage was more than 10 V, which is sufficient for a lithium ion battery to be used as a power source. Its cut-off and maximum oscillation frequencyies were 14.7 and 19 GHz, respectively. Its power added efficiency at 2 GHz was 64%.