First GaN half-bridge transistor integrates two GaN FETs

摘要

Today, the most common building block used in power conversion is the half bridge. It is the starting point for the journey toward a power system-on-a-chip. The EPC2100 is the first commercially available enhancement-mode monolithic half-bridge GaN transistor. It integrates two eGaN power FETs into a single device so the interconnect inductances and the interstitial space needed on the PCB are eliminated. This increases both efficiency (especially at higher frequencies) and power density, while reducing assembly costs to the end user's power conversion system.