A 1 MHz Half-Bridge Resonant DC/DC Converter Based on GaN FETs and Planar Magnetics

摘要

A 1 MHz half-bridge resonant dc/dc converter based on GaN FETs and planar magnetics is proposed in this paper, which improves the system efficiency and power density. The resonant network can achieve satisfactory soft-switching characteristics based on a small impedance angle, which greatly reduces the losses of switches and diodes. The losses characteristics during the turn-on and turn-off transitions are analyzed in detail. The calculation results show that the GaN FETs with low output capacitance and on resistance can achieve fast switching speed and low losses in high-frequency conditions. To reduce the profile and increase the power density of the system, planar magnetics are used in this paper. The response surface methodology (RSM) and modular layer model (MLM) are adopted to help design the planar inductor and transformer, respectively. Both of the methods offer clearer and more effective ways to design the planar magnetics. A 25-W prototype is built to verify the feasibility of the proposed high-frequency converter.