METHOD FOR MANUFACTURING GaN-FIN STRUCTURE AND FINFET, AND DEVICE AND FINFET USING GaN-FIN STRUCTURE MANUFACTURED THEREBY

摘要

Disclosed are a method for manufacturing a GaN-Fin structure and a FinFET, a GaN-Fin structure and a FinFET manufactured thereby. The method for a GaN-Fin structure comprises: forming an initial GaN-Fin structure by performing side etching on a first GaN layer; forming an etching barrier in a side-etched area on the basis of the side etching; performing etching so that the initial GaN-Fin structure has a V-groove structure; depositing a sacrificial Fin layer on an etched area so that the initial GaN-Fin structure has the V-groove structure; forming a side wall based on the sacrificial Fin layer deposited by performing vertical etching on the deposited sacrificial Fin layer; depositing a second GaN layer in an area etched on the basis of the vertical etching; and removing the side wall and the etching barrier. Accordingly, it is possible to generate a GaN-Fin structure.;COPYRIGHT KIPO 2016