GaN FET Structure and Fabrication Method of GaN FET using Nano Barrier Gate

摘要

The present invention relates to a GaN FET using a nano-barrier gate and a manufacturing method therefor. The GaN FET comprises: a GaN epitaxial layer; an Al_xGa_(1-x)N layer and an Al_yGa_(1-y)N layer sequentially stacked on top of the GaN epitaxial layer to form a two-dimensional electron gas channel at the interface of the GaN epitaxial layer; and a nano-barrier gate forming an extinction region in a portion of the two-dimensional electron gas channel by making contact with the GaN epitaxial layer through contact formed in the Al_xGa_(1-x)N layer and the Al_yGa_(1-y)N layer. Therefore, the current driving force and operating speed can be increased while performing a normal off operation.