Field-drifting resonant tunneling through a-Si:H/a-Si/sub 1-x/C/sub x/:H quantum wells at different locations of the i-layer of a p-i-n structure

摘要

The transport of photogenerated carriers perpendicular to the quantum wells in the p-i-n structure is discussed. The field-drifting resonant tunneling through the a-Si:H/a-Si/sub 1-x/C/sub x/:H double-barrier (or three-barrier) quantum wells, located at different positions of the i-layer, was studied. The room-temperature resonant-tunneling behavior is observed when the quantum well structure is embedded in the middle second of the i-layer. The results provide further evidence of quantum size effects in amorphous-silicon-based superlattice structures.