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P-I-N STRUCTURES AND METHODS FOR FORMING P-I-N STRUCTURES HAVING AN I-LAYER FORMED VIA HOT WIRE CHEMICAL VAPOR DEPOSITION (HWCVD)
P-I-N STRUCTURES AND METHODS FOR FORMING P-I-N STRUCTURES HAVING AN I-LAYER FORMED VIA HOT WIRE CHEMICAL VAPOR DEPOSITION (HWCVD)
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机译:具有通过热线化学气相沉积(HWCVD)形成I层的P-I-N结构和方法
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摘要
Embodiments of the present invention provide p-i-n structures and methods for forming p-i-n structures useful, for example, in photovoltaic cells. In some embodiments, a method for forming a p-i-n structure on a substrate may include forming a bi-layer p-type layer on the substrate by: depositing a microcrystalline p-type layer atop the protective layer; and depositing an amorphous p-type layer atop the microcrystalline p-type layer; depositing an amorphous i-type layer via hot wire chemical vapor deposition atop the amorphous p-type layer; and depositing an amorphous n-type layer atop the amorphous i-type layer. A p-i-n structure may include a bi-layer p-type layer disposed above a substrate, the bi-layer p-type layer having a microcrystalline p-type layer and an amorphous p-type layer disposed atop the microcrystalline p-type layer; an amorphous i-type layer disposed atop the bi-layer p-type layer; and an n-type layer disposed atop the i-type layer.
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