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METHODS FOR CLEANING A SURFACE OF A SUBSTRATE USING A HOT WIRE CHEMICAL VAPOR DEPOSITION HWCVD CHAMBER

机译:使用热线化学气相沉积HWCVD腔室清洁基材表面的方法

摘要

Methods for cleaning the surface of a substrate using a hot wire chemical vapor deposition (HWCVD) chamber are provided herein. In some embodiments, a method for cleaning a surface of a substrate includes providing a substrate to a hot-wire chemical vapor deposition (HWCVD) chamber wherein the material is disposed on a surface of the substrate; Providing a hydrogen (H 2 ) gas to the HWCVD chamber; Heating the one or more than one filament disposed on HWCVD chamber to a temperature sufficient to dissociate the hydrogen (H 2) gas; And exposing the substrate to dissociated hydrogen (H 2 ) gas to remove at least a portion of the material from the surface of the substrate.
机译:本文提供了使用热线化学气相沉积(HWCVD)腔室清洁衬底表面的方法。在一些实施例中,一种用于清洁衬底表面的方法包括:将衬底提供给热线化学气相沉积(HWCVD)室,其中,所述材料设置在衬底表面上;以及向HWCVD室提供氢气(H 2 );将设置在HWCVD腔室上的一根或多根灯丝加热到足以分解氢气(H 2)的温度;然后将基板暴露于离解的氢气(H 2 )气体中,以从基板表面去除至少一部分材料。

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