Formation of TiSi/sub 2/ and shallow junction by As/sup +/ ion-beam mixing and infrared rapid heat treatment

摘要

A technique for forming shallow junctions with low-resistance silicide contacts developed for the use in VLSI with scaled MOSFETs is discussed. The salicide (self-aligned silicide) MOSFET gate and source-drain features self-aligned refractory metal silicide and are isolated from one another even without any insulating spacer on the gate sides. A critical step in such a MOSFET fabrication process is the ion implantation through metal silicidation technique, which includes As/sup +/ ion-beam-induced titanium-silicon interface mixing and infrared rapid heat treatment to form simultaneously the n/sup +/-p junction and a high-quality TiN covered TiSi/sub 2/ contact layer.