Observation of stripe-direction dependence of threshold current density for AlGaInP laser diodes with CuPt-type natural superlattice in Ga/sub 0.5/In/sub 0.5/P active layer

摘要

Summary form only given. The authors report the observation of a large stripe-direction dependence of threshold current density for AlGaInP laser diodes with CuPt-type natural superlattice (NSL) in a Ga/sub 0.5/In/sub 0.5/P active layer. The anisotropy is attributed to the existence of NSL in the active layer. Epitaxial wafers were grown on Si-doped exact