In a visible light semiconductor laser with (AlxGa1-x)0.5In0.5P (0 ≦ x ≦ 1) crystal layers (52, 54) and a process for growing an(AlxGa1-x)0.5In0.5P (0 ≦ x ≦ 1) crystal, a GaAs substrate (51) on which (AlxGa1-x)0.5In0.5P is grown in an epitaxial method selected from MOVPE and MBE provides one selected from a (110) plane, a plane equivalent to the (110) plane, a (111) plane, and a plane equivalent to the (111) plane as a main plane for a crystal growth of (AlxGa1-x)0.5In0.5P. As a result, a bandgap energy Eg of the (AlxGa1-x)0.5In0.5P crystal can be the maximum value inherent to the mixed crystal independent on a growth temperature and a V/III ratio.
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机译：在具有（Al x Ga 1-x ） 0.5 In 0.5 P（0≤ x≦1）晶体层（52、54）和（Al x Ga 1-x ） 0.5 In 0.5 P（0≤x≤1）晶体，即GaAs衬底（51），其上（Al x Ga 1-x ） 0.5 In 0.5 P以选自MOVPE的外延方法生长，MBE提供了一个选自（110）平面，等于（110）平面，（111）平面的平面，以及与（111）平面等效的平面作为（Al x Ga 1-x ） 0.5 晶体生长的主平面在 0.5 P中。结果，（Al x Ga 1-x ） 0.5 In 0.5 P的带隙能量Eg晶体可以是混合晶体固有的最大值，而与生长温度和V / III比无关。
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