Integrated self-scanning light-emitting device (SLED)

摘要

The fabrication of monolithically integrated self-scanning light-emitting device (SLED) on a GaAs substrate and its performance are described. The SLED consists of integrated light-emitting thyristors whose turn-on voltages interact with each other through coupling diodes or resistors. Light-emitting states are automatically transferred by input clock pulses without using external shift registers. The resistors are made of a Cr-SiO cermet film, and the coupling diodes are made in part with p-n layers of thyristors. The integrated SLED is fabricated in eight photolithographic steps. High-speed operation, more than 10 MHz, can be achieved due to its simple structure and high-density packaging. It is expected that this SLED will be a key device in future large-scale optoelectronic integrated circuits.