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Light-emitting thyristor, self-scanning light-emitting element array, optical writing head and image forming apparatus, light-emitting thyristor and self-scanning light-emitting element array manufacturing method
Light-emitting thyristor, self-scanning light-emitting element array, optical writing head and image forming apparatus, light-emitting thyristor and self-scanning light-emitting element array manufacturing method
PROBLEM TO BE SOLVED: To provide a light-emitting thyristor that improves the amount of light emission.SOLUTION: A light-emitting thyristor includes a stack of a first p-type semiconductor multilayer film reflector 22A, a current constriction layer 30 composed of a p-type AlAs, a second p-type semiconductor multilayer film reflector 22B, an n-type gate layer 24, a p-type gate layer 26, and a cathode layer 28 in this order from a p-type GaAs substrate 20 side. An anode electrode 40 is formed on a rear surface of the substrate, and cathode electrodes 32L and 32T are formed on the cathode layer 28. The injection density of carriers is enhanced by the current constriction layer 30, and emitted light is reflected above the substrate by the first and second semiconductor multilayer film reflectors 22A and 22B.
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