首页> 外国专利> Light-emitting thyristor, self-scanning light-emitting element array, optical writing head and image forming apparatus, light-emitting thyristor and self-scanning light-emitting element array manufacturing method

Light-emitting thyristor, self-scanning light-emitting element array, optical writing head and image forming apparatus, light-emitting thyristor and self-scanning light-emitting element array manufacturing method

机译:发光晶闸管,自扫描发光元件阵列,光学写入头和图像形成装置,发光晶闸管和自扫描发光元件阵列的制造方法

摘要

PROBLEM TO BE SOLVED: To provide a light-emitting thyristor that improves the amount of light emission.SOLUTION: A light-emitting thyristor includes a stack of a first p-type semiconductor multilayer film reflector 22A, a current constriction layer 30 composed of a p-type AlAs, a second p-type semiconductor multilayer film reflector 22B, an n-type gate layer 24, a p-type gate layer 26, and a cathode layer 28 in this order from a p-type GaAs substrate 20 side. An anode electrode 40 is formed on a rear surface of the substrate, and cathode electrodes 32L and 32T are formed on the cathode layer 28. The injection density of carriers is enhanced by the current constriction layer 30, and emitted light is reflected above the substrate by the first and second semiconductor multilayer film reflectors 22A and 22B.
机译:解决的问题:提供一种提高发光量的发光晶闸管。解决方案:发光晶闸管包括第一p型半导体多层膜反射器22A的叠层,由p型半导体叠层膜反射器22A构成的电流限制层30。从p型GaAs衬底20侧开始依次依次具有p型AlAs,第二p型半导体多层膜反射器22B,n型栅极层24,p型栅极层26和阴极层28。在基板的背面上形成阳极电极40,在阴极层28上形成阴极电极32L和32T。载流子的注入密度通过电流限制层30而提高,并且发射的光在基板上方反射。通过第一和第二半导体多层膜反射器22A和22B。

著录项

  • 公开/公告号JP6123559B2

    专利类型

  • 公开/公告日2017-05-10

    原文格式PDF

  • 申请/专利权人 富士ゼロックス株式会社;

    申请/专利号JP20130164007

  • 发明设计人 福永 秀樹;

    申请日2013-08-07

  • 分类号H01L33/08;H01L33/10;H01L33/14;

  • 国家 JP

  • 入库时间 2022-08-21 13:55:56

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号