Electrical characteristics of rapid thermal nitrided-oxide gate n- and p-MOSFET's with less than 1 atom% nitrogen concentration

摘要

The characteristics and reliability of nitrided-oxide gate n- and p-MOSFET's with less than 1 atom% nitrogen concentration in the gate films were investigated in detail. These very light nitridations were accomplished using NH/sub 3/ gas at low temperatures/spl minus/from 800/spl deg/ C to 900/spl deg/ C. Nitrogen concentrations as low as 0.13 atom% were successfully measured by SIMS and AES. The region of optimum nitrogen concentration for deep-submicron devices is discussed. We explain how good drivability and good hot-carrier reliability were attained simultaneously with a nitrogen concentration of around 0.5 atom%, which is equivalent to that of oxynitride gate MOSFETs using N/sub 2/O gas. The suppression of boron penetration is also discussed. Light nitridation by ammonia gas is particularly desirable for deep-submicron processes because it can be accomplished at a relatively low temperature of about 900/spl deg/C.