A polycide gate electrode with a conductive diffusion barrier formed with ECR nitrogen plasma for dual gate CMOS

摘要

A simple diffusion barrier technology for polycide gate electrodes is presented. An extremely thin silicon nitride layer is formed by poly Si surface nitridation with ECR nitrogen plasma of only nitrogen gas and without substrate heating. The silicon nitride layer acts as an excellent barrier to impurity diffusion from polysilicon to silicide. It was found that barrier formation with ECR nitrogen plasma results in no fatal degradation in the MOS interface characteristics. This technology is very effective for making dual polycide gates inexpensively due to its simplicity and a good affinity with conventional ULSI fabrication processes.