A versatile half-micron complementary BiCMOS technology for microprocessor-based smart power applications

摘要

A modular, high density 0.5 /spl mu/m Complementary BiCMOS technology with integrated high-voltage Lateral Diffused MOS (LDMOS) and conductivity modulated Lateral Insulated Gate Bipolar Transistor (LIGBT) structures designed for high performance, multi-functional integrated circuit applications is described. The advantages of VLSI processing and 0.5 /spl mu/m compatible layout rules have been applied to the design and fabrication of the tight-pitch high-voltage devices without sacrificing the performance of 0.5 /spl mu/m dual-poly (N+/P+) gate CMOS and complementary vertical bipolar transistors. Single chip integration of VLSI microprocessors with high-voltage and/or high-current input and output functions for "Smart Power" applications can be achieved using this technology.