Large area MOS-gated power devices using high-current fusible links

摘要

A new approach for improving the yield of large area MOS-gated power devices is described. This approach uses high-current fusible links of aluminum to isolate defective segments from the rest of the device. Unlike previously reported wafer repair techniques, the proposed approach does not require any additional processing. The testing procedure used in this method is suitable for automation and it does not affect the switching speed of the device. Power MOSFET's and IGBT's have been successfully fabricated using these fusible links to perform wafer repair.