Fowler-Nordheim stress degradation in gate oxide: results from gate-to-drain capacitance and charge pumping current

摘要

The buildup of positive oxide charge and interface trap charge, due to Fowler-Nordheim stress, is observed in the gate-drain overlap region of the MOSFET. Results from gate-to-drain capacitance and charge pumping current show a steady increase in positive charge near the anode interface. Interface trap generation becomes significant when injected electron fluence exceeds /spl sim/10/sup 14/ cm/sup -2/, and dominates net charge creation at higher fluence.