A method for locating the position of oxide traps responsible for random telegraph signals in submicron MOSFETs

摘要

Random telegraph signals (RTS) have been measured in the drain to source voltage of W/spl times/L=0.97/spl times/0.15 /spl mu/m/sup 2/ medium-doped drain (MDD) n-MOSFET's. The depth of the trapping center in the oxide is found from the gate voltage dependence of the emission and capture times. The difference in the drain voltage dependence of the capture and emission times between the forward and reverse modes is utilized to find the position of the trap in the channel with respect to the source.