Effect of Switched biasing on 1/f noise and random telegraph signals in deep-submicron MOSFETs

摘要

Switched bias noise measurements on relatively large (>0.8 μm) n-channel MOSFETs have been reported in the literature. Measurements are presented on 0.2/0.18 μm n-channel MOSFETs, the noise performance of which seems to be dominated by the effect of a small number of interface states. Switched biasing is seen to influence the dynamic behaviour of these states, and reduce the noise of the devices