A diode-based two-wire solution for temperature-compensated piezoresistive pressure sensors

摘要

A novel two-wire solution for ultraminiaturized temperature-compensated piezoresistive pressure sensors is presented. The technique makes it possible to measure both pressure and temperature separately by using bias-controlled diodes as switches between the pressure and temperature sensing elements. The p-n junction diodes are forward-biased or reverse-biased depending on the polarization of the voltage supply. The new diode-based two-wire technique was evaluated using a surface micromachined pressure sensor where the pressure-sensing element consists of a piezoresistor on an (80/spl times/40/spl times/1 /spl mu/m) double end supported force- transducing beam. The beam is located beneath a (100/spl times/100/spl times/2 /spl mu/m) square polysilicon diaphragm having its ends attached to the diaphragm and to the cavity edge. The thermal compensation piezoresistor is also located in the cavity on a (100/spl times/40/spl times/1 /spl mu/m) beam. Both ends of this beam are attached to the cavity edge and are therefore pressure-insensitive. The new detection solution enables a reduction of conducting leads from three to two in combination with high pressure sensitivity (0.7 /spl mu/V/V/mmHg) and environmental isolation compared to a commercialized traditional piezoresistive pressure sensor. Its simplicity and the potential for size reduction due to fewer bonding pads and conducting wires make it ideal for applications such as disposable blood pressure sensors where cost and size are critical parameters.