Leakage Power Analysis of 25-nm Double-Gate CMOS Devices and Circuits

摘要

Leakage power and input pattern dependence of leakage for extremely scaled (L{sub}(eff) = 25 nm) double-gate (DG) circuits are analyzed, compared with those of conventional bulk-Si counterpart. Physics-based numerical two-dimensional simulation results for DG CMOS device/circuit power are presented, identifying that DG technology is an ideal candidate for low-power applications. Unique DG device features resulting from gate-gate coupling are discussed and effectively exploited for optimal low-leakage device design. Design tradeoffs for DG CMOS power and performance are suggested for low-power and high-performance applications. Total power consumptions of static and dynamic circuits and latches for DG device, considering state dependency, show that leakage currents for DG circuits are reduced by a factor of over 10×, compared with bulk-Si counterpart.