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On-Chip High-$Q$Variable Inductor Using Wafer-Level Chip-Scale Package Technology

机译:晶圆级芯片规模封装技术的片上高$ Q $可变电感器

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In this paper, the authors propose an on-chip high-$Q$variable inductor embedded in wafer-level chip-scale package (WL-CSP). The variable inductor has a metal plate and a spiral inductor fabricated by the WL-CSP technology. The metal plate can be moved by a microelectromechanical systems (MEMS) actuator, and the inductance is varied according to the position of the metal plate. At the present time, the MEMS actuator has not been implemented yet. In this paper, the authors present a feasibility study on the proposed variable inductor. The inductor is evaluated with measurement results using a metal plate moved by a micromanipulator instead of the MEMS actuator. At 2 GHz, the measured inductance is varied from 4.80 to 2.27 nH, i.e., the variable ratio is 52.6%. The maximum value of quality factor is 50.1.
机译:在本文中,作者提出了一种嵌入在晶圆级芯片规模封装(WL-CSP)中的片上高Q $可变电感器。可变电感器具有金属板和通过WL-CSP技术制造的螺旋电感器。可以通过微机电系统(MEMS)致动器来移动金属板,并且电感根据金属板的位置而变化。目前,MEMS致动器尚未被实现。在本文中,作者提出了对所提出的可变电感器的可行性研究。使用由微操纵器而不是MEMS致动器移动的金属板,利用测量结果评估电感器。在2 GHz时,测得的电感在4.80至2.27 nH之间变化,即可变比率为52.6%。品质因数的最大值是50.1。

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