Hot Carrier and Negative-Bias Temperature Instability Reliabilities of Strained-Si MOSFETs

摘要

In this brief, the $I$– $V$ characteristics and reliability degradations for both bulk-Si and strained-Si with relaxed $hbox{Si}_{x}hbox{Ge}_{1 - x}$ buffer devices have been fully characterized. The hot carrier degradation in strained-Si nMOSFET devices is more severe than that in bulk-Si ones, suggesting higher impact ionization current and higher defect densities in the $ hbox{SiO}_{2}$/strained-Si interface. On the other hand, enhanced degradation of negative bias temperature instability is observed for strained-Si pMOSFET devices compared to control pMOSFET devices, indicating a large number of interface traps in the strained-Si device.